Schottky Barrier Diode

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Schottky Barrier Diode
Manufacturer	Package	Rectified Current

Forward Voltage (Vf@If)	Reverse Voltage (Vr)	Diode Configuration

Reverse Leakage Current (Ir)

Schottky Barrier Diode (SBD) is a diode made using the Schottky barrier characteristics. Its name is derived from the car-making physicist Walter H. Schottky, in honor of his contributions to the field of semiconductor technology. Schottky diodes are not formed by traditional PN structures, but by metal-semiconductor junctions formed by the contact of metal and semiconductor.

Main Features

Low on-state voltage drop: The on-state voltage drop of Schottky diodes is very low, typically between 0.15V and 0.45V, far lower than the 0.7V to 1.7V of general diodes. This gives Schottky diodes a significant advantage in applications where low voltage drop is required.

High-speed switching capability: Schottky diodes have the ability to switch quickly, with switching times as short as nanoseconds. This characteristic makes Schottky diodes excellent in high-frequency applications.

High-frequency response: Due to the high-speed switching capability of Schottky diodes, they have good high-frequency response characteristics and are suitable for high-frequency signal processing.

Application Fields

Power Circuit Protection: Schottky diodes are commonly used to prevent reverse current damage to circuits, especially in low-voltage systems.

High-frequency wave detection: Using its high-frequency response characteristics, Schottky diodes can be used for the detection and reception of high-frequency signals.

Fast switching circuits: Schottky diodes provide more efficient performance in circuits that require fast switching.

Other applications: With the continuous development of electronic devices, Schottky diodes are also used in circuits such as mixers and wave detectors, as well as in products with limited space such as wearable devices and IoT hardware.